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2SA1972

Part Number	2SA1972
Manufacturer	Toshiba Semiconductor
Description	TRANSISTOR
Published	Mar 22, 2005
Detailed Description	www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applica...
Datasheet	2SA1972 PDF File

Overview

www.
DataSheet.
co.
kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.
5 −1 −0.
25 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC TO-92MOD JEITA ― Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.
) may cause this product to decrease in the Weight: 0.
36 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing t...

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