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2SA1978

NEC
Part Number 2SA1978
Manufacturer NEC
Description PNP EPITAXIAL SILICON TRANSISTOR
Published Mar 22, 2005
Detailed Description DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEAT...
Datasheet PDF File 2SA1978 PDF File

2SA1978
2SA1978

Overview
DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • High fT fT = 5.
5 GHz TYP.
| S21e | = 10.
0 dB TYP.
@f = 1.
0 GHz, VCE = −10 V, IC = −15 mA 2 PACKAGE DIMENSIONS (in milimeters) _0.
2 2.
8+ 0.
4 +0.
1 –0.
05 • • • • 1.
5 0.
65 +0.
1 –0.
15 High speed switching characteristics Equivalent NPN transistor is the 2SC2351.
0.
95 _0.
2 2.
9+ Alternative of the 2SA1424.
2 0.
95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Ti Tstg Rating −20 −12 −3.
0 −50 200 150 −65 to +150 Unit V V 1.
1 to 1.
4 0.
3 Marking 0.
16 +0.
1 –0.
06 V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cre* | S21e | NF 2...


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