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AP6679BGM-HF

Advanced Power Electronics
Part Number AP6679BGM-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2013
Detailed Description AP6679BGM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ F...
Datasheet PDF File AP6679BGM-HF PDF File

AP6679BGM-HF
AP6679BGM-HF

Overview
AP6679BGM-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S -30V 9mΩ -13.
5A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 +20 -13.
5 -10.
8 -50 2.
5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200905121 Free Datasheet http://www.
datasheet4u.
com/ AP6679BGM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-13A VGS=-4.
5V, ID=-8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
-30 -1 - Typ.
10 44 7 28 13 11 64 42 520 455 Max.
Units 9 15 -3 -1 -25 +100 70 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VGS=+20V ID=-13A VDS=-24V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.
0MHz Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V Gate-Source Leakage Total Gat...


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