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AP6679BGM-HF-3

Advanced Power Electronics
Part Number AP6679BGM-HF-3
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP6679BGM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low O...
Datasheet PDF File AP6679BGM-HF-3 PDF File

AP6679BGM-HF-3
AP6679BGM-HF-3

Overview
Advanced Power Electronics Corp.
AP6679BGM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -30V 9mΩ -13.
5A ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP6679BGM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G SO-8 (M) S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -13.
5 -10.
8 -50 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP6679BGM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200905121-3 1/5 Advanced Power Electronics Corp.
AP6679BGM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-13A VGS=-4.
5V, ID=-8A Min.
-30 -1 - Typ.
10 44 7 28 13 11 64 42 520 455 Max.
Units 9 15 -3 -1 -25 ±100 70 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VGS=±20V ID=-13A VDS=-24V VG...


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