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AP6679BGP-HF

Advanced Power Electronics
Part Number AP6679BGP-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2013
Detailed Description AP6679BGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fas...
Datasheet PDF File AP6679BGP-HF PDF File

AP6679BGP-HF
AP6679BGP-HF

Overview
AP6679BGP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -30V 9mΩ -63A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.
G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 +20 -63 -40 -240 54.
3 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.
3 62 Units ℃/W ℃/W 1 201007141 Data and specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP6679BGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-40A VGS=-4.
5V, ID=-30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
-30 -1 - Typ.
60 44 6.
5 28.
5 11 67 37 22 520 495 2 Max.
Units 9 15 -3 -10 +100 70 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=-250uA VDS=-10V, ID=-30A VDS=-24V, VGS=0V VGS= +20V, VDS=0V ID=-30A VDS=-24V VGS=-4.
5V VDS=-15V ID...


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