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AP6679BGP-HF-3

Advanced Power Electronics
Part Number AP6679BGP-HF-3
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP6679BGP-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low O...
Datasheet PDF File AP6679BGP-HF-3 PDF File

AP6679BGP-HF-3
AP6679BGP-HF-3

Overview
Advanced Power Electronics Corp.
AP6679BGP-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -30V 9mΩ -63A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP6679BGP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well suited for low voltage G applications such as DC/DC converters.
D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -30 +20 -63 -40 -240 54.
3 2 -55 to 150 -55 to 150 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.
3 62 Units °C/W °C/W Ordering Information AP6679BGP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201007141-3 1/5 Advanced Power Electronics Corp.
AP6679BGP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-40A VGS=-4.
5V, ID=-30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
-30 -1 - Typ.
60 44 6.
5 28.
5 11 67 37 22 520 495 2 Max.
Units 9 15 -3 -10 ±100 70 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=-250uA VDS=-10V, ID=...


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