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2N2907A

Part Number	2N2907A
Manufacturer	NXP
Description	PNP switching transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product speciﬁcation Supersedes d...
Datasheet	2N2907A PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30 Philips Semiconductors Product speciﬁcation PNP switching transistors FEATURES • High current (max.
600 mA) • Low voltage (max.
60 V).
APPLICATIONS • Switching and linear amplification.
DESCRIPTION PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
3 2N2907; 2N2907A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 3 2 MAM263 1 Fig.
1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz open emitter open base − − − − 100 200 −40 −60 −600 400 300 − 300 MHz ns V V mA mW CONDITIONS − MIN.
MAX.
−60 V UNIT ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 1997 May 30 2 Philips Semiconductors Product speciﬁcation PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C open collector CONDITIONS open emitter open base; IC < −100 mA 2N2907; 2N2907A MIN.
− − − − − − − − − −65 − −65 MAX.
−60 −40 −60 −5 −600 −800 −200 400 1.
2 +150 200 +150 V V V V UNIT mA mA mA mW W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS ...

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