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2SB1114

Kexin
Part Number 2SB1114
Manufacturer Kexin
Description Transistor
Published Oct 29, 2013
Detailed Description SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Transistors Features World standard miniature package. High DC curre...
Datasheet PDF File 2SB1114 PDF File

2SB1114
2SB1114

Overview
SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Transistors Features World standard miniature package.
High DC current gain hFE=135 to 600.
Low VCE(sat): VCE(sat)=-0.
3V at 1.
5A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse) * Total power dissipation Junction temperature Storage temperature range * Pulsed: PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -20 -20 -6 -2 -3 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 16 V, IE = 0 VEB = -6.
0 V, IC = 0 VCE = -2.
0 V, IC = -100 mA VCE = -2.
0 V, IC = -2.
0mA VCE(sat) IC = -1.
5A, IB = -50 mA VBE(sat) IC = -1.
5A, IB = -50 mA VBE fT Cob VCE = -6.
0 V, IC = -100 mA VCE = -10 V, IE = 50 mA VCB = -10 V, IE = 0 , f = 1.
0 MHz 135 40 -0.
3 -1.
05 -0.
5 -1.
2 V V V MHz pF 350 Min Typ Max -100 -100 600 Unit nA nA -0.
65 -0.
68 -0.
75 180 60 hFE Classification Marking hFE ZM 135 270 ZL 200 400 ZK 300 600 www.
kexin.
com.
cn 1 Free Datasheet http://www.
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