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2SB1120

Kexin
Part Number 2SB1120
Manufacturer Kexin
Description PNP Epitaxial Planar Silicon Transistors
Published Oct 29, 2013
Detailed Description SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation vol...
Datasheet PDF File 2SB1120 PDF File

2SB1120
2SB1120

Overview
SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE(sat)max=-0.
45V.
Large current capacity : IC=-2.
5A, ICP=-5A.
Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.
Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -10 -7 -2.
5 -5 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Symbol ICBO IEBO hFE fT Testconditons VCB = -16V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -500mA VCE=-2V IC=-3A 100 70 250 -0.
25 -0.
45 -20 -10 -7 70 MHz V V V V pF Min Typ Max -100 -100 560 Unit nA nA VCE = -10V , IC = -50mA VCE(sat) IC = -1.
5A , IB = -0.
15A V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob VCB = -10V , f = 1MHz hFE Classification Marking Rank hFE E 100 200 BC F 160 320 G 280 560 www.
kexin.
com.
cn 1 Free Datasheet http://www.
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