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2SB1182

Weitron
Part Number 2SB1182
Manufacturer Weitron
Description PNP PLASTIC ENCAPSULATE TRANSISTORS
Published Oct 29, 2013
Detailed Description 2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUT...
Datasheet PDF File 2SB1182 PDF File

2SB1182
2SB1182

Overview
2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -40 -32 -5.
0 -2.
0 1.
5 +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-50µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -40 -32 -5.
0 Typ Max -1.
0 -1.
0 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=-1.
0mA Emitter-Base Breakdown Voltage IE=-50µA VCB=-20V VEB =-4.
0V WEITRON http://www.
weitron.
com.
tw 1/5 30-Nov-07 Free Datasheet http://www.
datasheet4u.
com/ 2SB1182 ON CHARACTERISTICS DC Current Gain VCE=-3V, IC=-500mA Collector-Emitter Saturation Voltage IC =-2A, IB =-200mA hFE(1) VCE(sat) 82 390 -0.
8 V DYNAMIC CHARACTERISTICS Trans...


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