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2SB1188

TRANSYS
Part Number 2SB1188
Manufacturer TRANSYS
Description Plastic-Encapsulated Transistors
Published Oct 29, 2013
Detailed Description Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1. BASE F...
Datasheet PDF File 2SB1188 PDF File

2SB1188
2SB1188

Overview
Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1.
BASE FEATURES Power dissipation PCM: 0.
5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2.
COLLECTOR 2 3.
EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCe(sat) Test conditions MIN -40 -32 -5 -1 -1 82 390 -0.
8 80 65 V MHz pF MAX UNIT V V V µA µA Ic=-50µA , IE=0 IC= -1mA , IB=0 IE=-50µA, IC=0 VCB=-20 V , IE=0 VEB=-4 V , IC=0 VCE=-3V, IC= -0.
5A IC=-2A, IB= -0.
2A VCE=-5V, IC=-0.
5A ,f=30MHz VCB=-10V, IE=0 ,f=1MHz fT Cob * Measured using pulse current.
CLASSIFICATION OF hFE Rank Range Marking p 82-180 BCP Q 120-270 BCQ R 180-390 BCR Free Datasheet http://www.
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