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2SB1217

Part Number	2SB1217
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 29, 2013
Detailed Description	isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Vol...
Datasheet	2SB1217 PDF File

Overview

isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissip...

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