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2SC4570

Part Number	2SC4570
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Oct 30, 2013
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4570 DESCRIPTION ·High Current-Gain—Bandwidth Product fT= 5.5 ...
Datasheet	2SC4570 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4570 DESCRIPTION ·High Current-Gain—Bandwidth Product fT= 5.
5 GHz TYP.
@VCE = 5 V, IC = 5 mA, f = 1.
0 GHz ·Low COB 0.
7pF TYP.
@VCB = 5 V, IE = 0, f = 1.
0 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF oscillator and mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.
0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 mA 0.
12 W 125 ℃ Tstg Storag...

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