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3DD13005

SeCoS
Part Number 3DD13005
Manufacturer SeCoS
Description NPN Plastic-Encapsulated Transistor
Published Nov 4, 2013
Detailed Description 3DD13005 Elektronische Bauelemente 4A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C...
Datasheet PDF File 3DD13005 PDF File

3DD13005
3DD13005

Overview
3DD13005 Elektronische Bauelemente 4A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 700 400 9 4 2 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time http://www.
SeCoSGmbH.
com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat) fT tF tS Min.
700 400 9 20 5 5 1.
8 Typ.
- Max.
1 0.
1 0.
05 30 0.
3 0.
8 1.
6 0.
6 6.
6 Unit V V V mA mA Test Condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=5V, IC=1A VCE=5V, IC=10mA IC=1A, IB=0.
2A IC=4A, IB=1A IC=2A, IB=0.
5A VCE=10V, IC=500mA, f =1MHz IB1= -IB2=0.
4A, IC=2A, VCC=120V IC=0.
25A V V V MHz µs µs Any changes of specification will not be informed individually.
2-Nov-2011 Rev.
A Page 1 of 1 Free Datasheet http://www.
datasheet4u.
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