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RN2907FS

Toshiba
Part Number RN2907FS
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Nov 11, 2013
Detailed Description RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN290...
Datasheet PDF File RN2907FS PDF File

RN2907FS
RN2907FS

Overview
RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
1.
0±0.
05 Unit: mm • • 0.
35 0.
35 1.
0±0.
05 Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
0.
7±0.
05 1 2 3 6 5 4 0.
1±0.
05 • Complementary to RN1907FS to RN1909FS 0.
48 -0.
04 +0.
02 Equivalent Circuit and Bias Resistor Values C Type No.
RN2907FS RN2908FS R2 RN2909FS E R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 B R1 fS6 1.
EMITTER1 1.
EMIITTER1 2.
BASE1 2.
EMITTER2 3.
COLLECTOR2 3.
BASE2 4.
EMITTER2 4.
COLLECTOR2 5.
BASE2 5.
BASE1 6.
COLLECTOR1 6.
COLLECTOR1 (E1) (E1) (B1) (E2) (C2) (B2) (E2) (C2) (B2) (B2) (C1) (C1) JEDEC JEITA TOSHIBA ― ― 2-1F1D Weight: 1 mg (typ.
) (Q1, Q2 common) Absolute Maximum Ratings (Ta = 25°C) Equivalent Circuit (top view) Rating −20 −20 −6 Unit V V Q1 Q2 Characteristics Collector-base voltage Collector-emitter voltage RN2907FS to RN2909FS RN2907FS Emitter-base voltage RN2908FS RN2909FS Collector current Collector power dissipation Junction temperature Storage temperature range RN2907FS to RN2909FS Symbol VCBO VCEO 6 5 4 VEBO −7 −15 V 1 mA mW °C °C 2 3 IC PC* Tj Tstg −50 50 150 −55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
*: Total rating ...


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