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HF30-28F

Part Number	HF30-28F
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	HF30-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28F is Designed for PACKAGE STYLE .380 4L FLG B .11...
Datasheet	HF30-28F PDF File

Overview

HF30-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28F is Designed for PACKAGE STYLE .
380 4L FLG B .
112 x 45° A FEATURES: • PG = 20 dB min.
at 30 W/30 MHz • IMD3 = -30 dBc max.
at 30 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.
125 NOM.
FULL R J .
125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 5.
0 A 65 V 35 V 4.
0 V 60 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.
9 OC/W O O O DIM A B C D E F G H I J .
240 / 6.
10 .
004 / 0.
10 .
085 / 2.
16 .
160 / 4.
06 MINIMUM inches / mm G H I MAXIMUM inches / mm .
220 / 5.
59 .
785 / 19.
94 .
720 / 18.
29 .
970 / 24.
64 .
230 / 5.
84 .
730 / 18.
54 .
980 / 24.
89 .
385 / 9.
78 .
006 / 0.
15 .
105 / 2.
67 .
180 / 4.
57 .
280 / 7.
11 .
255 / 6.
48 ORDER CODE: ASI10604 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO hFE COB GP ηC IC = 10 mA IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.
0 V VCB = 30 V VCE = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 35 4.
0 10 1.
0 UNITS V V V V mA mA --pF dB % IC = 500 mA f = 1.
0 MHz PIN = 7.
0 W f = 175 MHz 5 200 65 7.
6 60 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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