DatasheetsPDF.com

HF30-28S

Part Number	HF30-28S
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is Designed for PACKAGE STYLE .380 4L STUD .112...
Datasheet	HF30-28S PDF File

Overview

HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is Designed for PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • PG = 20 dB min.
at 30 W/30 MHz • IMD3 = -30 dBc max.
at 30 W (PEP) • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 5.
0 A 65 V 35 V 4.
0 V 60 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 2.
9 OC/W O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10605 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO hFE COB GP ηC IC = 10 mA IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.
0 V VCB = 30V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 35 4.
0 ------------10 1.
0 200 65 --- UNITS V V V V mA mA --pF dB % IC = 500 mA f = 1.
0 MHz PIN = 7.
0 W f = 175 MHz 5.
0 --7.
6 60 VCE = 28 V POUT = 30 W(PEP) A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

Similar Datasheet

HF30-28F NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor
HF30-28S NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)