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HF50-12

Advanced Semiconductor
Part Number HF50-12
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power A...
Datasheet PDF File HF50-12 PDF File

HF50-12
HF50-12

Overview
HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.
5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band.
FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Severe Mismatch MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ T STG θ JC 10 A 36 V 18 V 4.
0 V 175 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.
0 C/W O PACKAGE STYLE .
380" 4L FLANGE 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CES BV CEO BV EBO ICES hFE Cob GPE η IMD TC = 25 OC TEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.
0 V VCB = 12.
5 V VCC = 12.
5 V ICQ = 50 mA IC = 5.
0 A f = 1.
0 MHz MINIMUM TYPICAL MAXIMUM 36 18 4.
0 10 20 200 15 16 55 -30 UNITS V V V mA --pF dB % dB POUT = 50 W(PEP) f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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