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HF50-12S

Part Number	HF50-12S
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12S is Designed for PACKAGE STYLE .380 4L STUD .112...
Datasheet	HF50-12S PDF File

Overview

HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12S is Designed for PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: B • PG = 16 dB min.
at 50 W/30 MHz • IMD3 = -30 dBc max.
at 50 W (PEP) • Omnigold™ Metalization System D C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 12.
0 A 36 V 18 V 3.
5 V 183 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.
05 OC/W O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10597 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GP ηC IC = 50 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.
0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 3.
5 10 UNITS V V V V mA --pF dB IC = 5.
0 A f = 1.
0 ...

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