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MJE13009

TGS
Part Number MJE13009
Manufacturer TGS
Description NPN Silicon Power Transistors
Published Jan 1, 2014
Detailed Description TIGER ELECTRONIC CO.,LTD Product specification SWITCHMODE Series NPN Silicon Power Transistors MJE13009 DESCRIPTION T...
Datasheet PDF File MJE13009 PDF File

MJE13009
MJE13009

Overview
TIGER ELECTRONIC CO.
,LTD Product specification SWITCHMODE Series NPN Silicon Power Transistors MJE13009 DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE such as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and Deflection circuits.
O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max.
Operating Junction Temperature l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 700 400 9 12.
0 6.
0 110 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-3PN ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Symbol Test Conditions VCB=400V, IE=0 VEB=9V, IC=0 IC=10mA, IB=0 VCE=5V, IC=5.
0A VCE=5V, IC=8.
0A IC=8.
0A,IB=1.
6A IC=12.
0A,IB=3.
0A Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Min.
— — 400 8 6 — — — 4 — Typ.
— — — — — — — — — 3.
5 Max.
1.
0 1.
0 — 40 30 1.
5 3.
0 1.
6 — 4 V MHz us V Unit mA mA V O ICEO IEBO VCEO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC=8.
0A,IB=1.
6A fT TS VCE=10V,IC=500mA IB1=IB2=1.
6A tp=25us Free Datasheet http://www.
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