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MJ8501

Inchange Semiconductor
Part Number MJ8501
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 9, 2014
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sust...
Datasheet PDF File MJ8501 PDF File

MJ8501
MJ8501

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB B MJ8501 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 1400 800 8 2.
5 5 2 4 125 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case M...


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