DatasheetsPDF.com

MJ8500

Inchange Semiconductor
Part Number MJ8500
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 9, 2014
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sust...
Datasheet PDF File MJ8500 PDF File

MJ8500
MJ8500

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB B MJ8500 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 1200 700 8 2.
5 5 2 4 125 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.
4 UNIT ℃/W isc Website：www.
iscsemi.
cn Free Datasheet http://www.
datasheet4u.
com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC=100mA ; IB=0 IC= 1A; IB= 0.
33A IC= 1A; IB= 0.
33A,TC=100℃ B B MJ8500 MIN 700 TYP.
MAX UNIT V 2.
0 3.
0 5.
0 1.
5 1.
5 0.
25 5.
0 5.
0 1.
0 7.
5 50 250 V V V mA mA mA IC= 2.
5A; IB= 1A IC= 1A; IB= 0.
33A IC= 1A; IB= 0.
33A,TC=100℃ B B VCEV=1200V;VBE(off)=1.
5V VCEV=1200V;VBE(off)=1.
5V;TC=150℃ VCE= 1200V; RBE= 50Ω,TC= 100℃ VEB= 7.
0V; IC=0 IC= 0.
5A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.
0kHz pF Switching times;Resistive Load td...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)