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AO3414

Kexin
Part Number AO3414
Manufacturer Kexin
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 MOSFET IC Unit: mm Features VDS (V)...
Datasheet PDF File AO3414 PDF File

AO3414
AO3414

Overview
SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 MOSFET IC Unit: mm Features VDS (V) = 20V +0.
1 2.
4-0.
1 +0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1 1 +0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1 2 RDS(ON) RDS(ON) 63m 87m (VGS = 2.
5V) (VGS = 1.
8V) 0.
55 RDS(ON) 50m (VGS = 4.
5V) +0.
1 1.
3-0.
1 ID = 4.
2A (VGS=4.
5V) 0.
4 3 +0.
05 0.
1-0.
01 +0.
1 0.
97-0.
1 1.
Base 1.
Gate 2.
Emitter 2.
Source +0.
1 0.
38-0.
1 0-0.
1 3.
Drain 3.
collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD RthJA RthJC TJ, TSTG Symbol VDS VGS ID Rating 20 8 4.
2 3.
2 15 1.
4 0.
9 125 80 -55 to 150 /W /W W A Unit V V Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Themal Resistance.
Junction-to-Ambient *1 Themal Resistance.
Junction-to-Case Junction and Storage Temperature Range *1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25 www.
kexin.
com.
cn 1 Free Datasheet http://www.
datasheet4u.
com/ SMD Type KO3414(AO3414) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=250ìA, VGS=0V VDS=16V, VGS=0V VDS=16V, VGS=0V ,TJ=55 VDS=0V, VGS= 8V 0.
4 Min 20 MOSFET IC Typ Max Unit V 1 A 5 100 0.
6 41 TJ=125 58 52 67 15 11 436 1 50 70 63 87 A S pF pF pF m nA V VDS=VGS ID=250ìA VGS=4.
5V, ID=4.
2A Static Drain-Source On-Resistance RDS(ON) VGS=4.
5V, ID=4.
2A VGS=2.
5V, ID=3.
7A VGS=1.
8V, ID=3.
2A On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off FallTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage ID(ON) g...


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