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AO3415A

Alpha & Omega Semiconductors
Part Number AO3415A
Manufacturer Alpha & Omega Semiconductors
Description 20V P-Channel MOSFET
Published Jan 11, 2014
Detailed Description AO3415A 20V P-Channel MOSFET General Description The AO3415A uses advanced trench technology to provide excellent RDS(O...
Datasheet PDF File AO3415A PDF File

AO3415A
AO3415A


Overview
AO3415A 20V P-Channel MOSFET General Description The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch applications.
Product Summary VDS ID (at VGS=-4.
5V) RDS(ON) (at VGS= -4.
5V) RDS(ON) (at VGS= -2.
5V) RDS(ON) (at VGS= -1.
8V) ESD protected -20V -4A < 41mΩ < 53mΩ < 65mΩ SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum -20 ±8 -4 -3.
5 -30 1.
5 1 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 80 100 52 Units ° C/W ° C/W ° C/W Rev 2: Sep 2011 www.
aosmd.
com Page 1 of 5 Free Datasheet http://www.
datasheet4u.
com/ AO3415A Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS, ID=-250µΑ VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-4A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.
5V, ID=-4A VGS=-1.
8V, ID=-2A VGS=-1.
5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4A IS=-1A,VGS=0V -0.
3 -30 34 49 42 52 61 20 -0.
64 -1 -2 600 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 48 6 7.
4 VGS=-4.
5V, VDS=-10V, ID=-4A 0.
8 1.
3 VGS=-4.
5V, VDS=-10V, RL=2.
5Ω, RGEN=3Ω IF=-4A, dI/dt=500A/µs 20 40 751 115 80 13 9.
3 1 2.
2 13 9 19 29 26 51 32 62 905 150 115 20 11 1.
2 3.
1 41 59 53 65 -0.
57 Min -20 -1 -5 ±10 -0.
9 Typ Max Units V µA µA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS...


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