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AO4566

Alpha & Omega Semiconductors
Part Number AO4566
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AO4566 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) ...
Datasheet PDF File AO4566 PDF File

AO4566
AO4566

Overview
AO4566 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.
5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 30V 12A < 11mΩ < 17mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D D Bottom View 100% UIS Tested 100% Rg Tested D G S S S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
1mH C VDS Spike Power Dissipation B 100ns TA=25° C TA=70° C TA=25° C TA=70° C VGS ID IDM IAS EAS VSPIKE PD TJ, TSTG Maximum 30 ±20 12 9.
4 48 15 11 36 2.
5 1.
6 -55 to 150 Units V V A A mJ V W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 42 70 20 Max 50 85 30 Units ° C/W ° C/W ° C/W Rev 0: Aug 2012 www.
aosmd.
com Page 1 of 5 Free Datasheet http://www.
datasheet4u.
com/ AO4566 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=12A IS=1A,VGS=0V TJ=125° C 1.
3 1.
8 9 12.
5 13.
5 45 0.
72 1 3.
5 542 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1 233 31 2 9 VGS=10V, VDS=15V, ID=12A 4.
3 2.
2 1.
7 4 VGS=10V, VDS=15V, RL=1.
25Ω, RGEN=3Ω IF=12A, dI/dt=500A/µs 3.
5 18 3 9.
7 11.
5 3 12.
2 5.
8 Min 30 1 5 ±100 2.
3 11 15 17 Typ Max Units V µA nA V mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage...


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