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AO4578

Alpha & Omega Semiconductors
Part Number AO4578
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description NTQtu5[PgPQlSł www.whxpcb.com AO4578 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV)...
Datasheet PDF File AO4578 PDF File

AO4578
AO4578

Overview
NTQtu5[PgPQlSł www.
whxpcb.
com AO4578 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.
5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 30V 20A < 5.
7mΩ < 9mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D D 100% UIS Tested 100% Rg Tested Bottom View D G G S S S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Maximum 30 ±20 Units V V Continuous Drain Current Pulsed Drain Current C Avalanche Current C TA=25° C TA=70° C ID IDM IAS EAS VSPIKE PD TJ, TSTG 20 15 120 40 8 36 3.
1 2 -55 to 150 A mJ V W ° C A Avalanche energy L=0.
01mH C VDS Spike Power Dissipation B 100ns TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev.
1.
0: August 2013 www.
aosmd.
com Page 1 of 5 Free Datasheet http://www.
datasheet4u.
com/ AO4578 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125° 1.
4 1.
8 4.
7 6.
5 7.
2 62 0.
7 1 4.
2 1128 VGS=0V, VDS=15V, f=1MHz f=1MHz 0.
7 435 59 1.
4 16.
2 VGS=10V, VDS=15V, ID=20A 7.
4 4.
3 2.
3 5.
5 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3 22.
5 Min 30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body...


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