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AON3406

Alpha & Omega Semiconductors
Part Number AON3406
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jan 12, 2014
Detailed Description AON3406 30V N-Channel MOSFET General Description The AON3406 uses advanced trench technology to provide excellent RDS(ON...
Datasheet PDF File AON3406 PDF File

AON3406
AON3406

Overview
AON3406 30V N-Channel MOSFET General Description The AON3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.
5V) DFN 3x3 Top View Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±20 10 7.
8 30 3.
0 1.
9 -55 to 150 Units V V A VGS C TA=25° TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 65 25 Max 42 100 35 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AON3406 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=9A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V C TJ=125° 1.
4 30 12 18 18 30 0.
73 1 4 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.
5 17 VGS=10V, VDS=15V, ID=10A 9 3.
4 4.
7 5 VGS=10V, VDS=15V, RL=1.
5Ω, RGEN=3Ω IF=10A, dI/dt=100A/µs 6 19 4.
5 19 9 6.
5 7.
5 25 6 21 12 0.
85 24 12 1200 15 22 24 1.
75 Min 30 0.
003 1 5 ±100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Volt...


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