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AON3408

Alpha & Omega Semiconductors
Part Number AON3408
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 12, 2014
Detailed Description AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technolo...
Datasheet PDF File AON3408 PDF File

AON3408
AON3408

Overview
AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications).
Features Features V V (V)==30V 30V DS DS(V) 8.
8A (V (V ==10V) 10V) ID ID==11A GS GS R R <24m 14.
5m Ω (V Ω GS (VGS = 10V) = 10V) DS(ON) DS(ON)< R R < < 29m 18m Ω Ω (V (V = = 4.
5V) 4.
5V) DS(ON) DS(ON) GS GS RDS(ON) < 45mΩ (VGS = 2.
5V) Rg,Ciss,Coss,Crss Tested DFN 3x3 Top View Bottom View S S S G D D D D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C IDSM IDM PDSM TJ, TSTG Maximum 30 ±12 8.
5 7.
2 40 3.
0 1.
9 -55 to 150 Units V V A A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 65 25 Max 42 100 35 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AON3408 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250uA, V GS=0V VDS=24V, V GS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=4.
5V, VDS=5V VGS=10V, ID=8.
8A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.
5V, ID=8A VGS=2.
5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=8.
8A IS=1A,V GS=0V Diode Forward Voltage Maxi...


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