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K8A50D

Toshiba
Part Number K8A50D
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 21, 2014
Detailed Description TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • ...
Datasheet PDF File K8A50D PDF File

K8A50D
K8A50D

Overview
TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
7 Ω (typ.
) • High forward transfer admittance: |Yfs| = 4.
0 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 500 V ±30 V 8 A 32 40 W 165 mJ 8 A 4.
0 mJ 150 °C -55 to 150 °C 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application o...


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