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28N50F

Fairchild Semiconductor
Part Number 28N50F
Manufacturer Fairchild Semiconductor
Description FDA28N50F
Published Jan 29, 2014
Detailed Description FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ...
Datasheet PDF File 28N50F PDF File

28N50F
28N50F


Overview
FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.
175Ω Features • RDS(on) = 0.
140Ω ( Typ.
)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ.
80nC) • Low Crss ( Typ.
38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These device are well suited for high efficient switch...



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