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HGTG7N60A4D

Part Number	HGTG7N60A4D
Manufacturer	Fairchild Semiconductor
Description	N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hy...
Datasheet	HGTG7N60A4D PDF File

Overview

Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49331.
The diode used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching applications operating at high frequencies wh...

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