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HGTG7N60A4D

Intersil Corporation
Part Number HGTG7N60A4D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.1 600V, SMPS Series N-Channel IGBT w...
Datasheet PDF File HGTG7N60A4D PDF File

HGTG7N60A4D
HGTG7N60A4D

Overview
TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.
1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49331.
The diode used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49333.
Features • >100kHz Operation At 390V, 7A • 200kHz Operation At 390V, 5A • 600V Switching SOA Capability • Typical Fall Time...


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