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HFS2N60

SemiHow
Part Number HFS2N60
Manufacturer SemiHow
Description 600V N-Channel MOSFET
Published Mar 27, 2014
Detailed Description HFS2N60 July 2005 BVDSS = 600 V HFS2N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Av...
Datasheet PDF File HFS2N60 PDF File

HFS2N60
HFS2N60

Overview
HFS2N60 July 2005 BVDSS = 600 V HFS2N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.
5 5 nC (Typ (Typ.
) ) RDS(on) typ = 4.
0 Ω ID = 2.
0 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.
0 Ω (Typ.
) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 2.
0* 1.
3* 6.
0* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 120 20 2.
0 5.
4 5.
5 23 0.
18 -55 to ...


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