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HFS2N60S

SemiHow
Part Number HFS2N60S
Manufacturer SemiHow
Description 600V N-Channel MOSFET
Published Feb 10, 2015
Detailed Description HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A FEATURES ‰ Originative...
Datasheet PDF File HFS2N60S PDF File

HFS2N60S
HFS2N60S

Overview
HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.
2 Ω ID = 2.
0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.
0 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.
2 Ω (Typ.
) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 2.
0* 1.
35* 8.
0* ±30 120 2.
0 5.
4 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storag...


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