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2SC5171

INCHANGE
Part Number 2SC5171
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Mar 27, 2014
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 DESCRIPTION ·High Transition Frenquency : fT=200MHz(Ty...
Datasheet PDF File 2SC5171 PDF File

2SC5171
2SC5171


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.
) ·Complementary to 2SA1930 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.
iscsemi.
cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1...



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