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MDF7N60B

MagnaChip
Part Number MDF7N60B
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Mar 30, 2014
Detailed Description MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET ...
Datasheet PDF File MDF7N60B PDF File

MDF7N60B
MDF7N60B

Overview
MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.
0A, 1.
15Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features  VDS = 600V  VDS = 660V  ID = 7.
0A  RDS(ON) ≤ 1.
15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jan.
2021.
Version 1.
5 1 Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Rating 600 660 ±30 7.
0* 4.
4* 28* 42 0.
33 13.
1 4.
5 220 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Symbol RθJA RθJC Rating 62.
5 3.
01 Unit oC/W Magnachip Semiconductor Ltd.
MDF7N60B N-channel MOSFET 600V Ordering Information Part Number MDF7N60BTH Temp.
Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta = 25oC Characteristics Symbol Test Condition Min Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.
0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 3.
5A Forward Transconductance gfs VDS = 30V, ID = 3.
5A - Dynamic Characteristics Total Gat...


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