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MDF7N65B

MagnaChip
Part Number MDF7N65B
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Jun 14, 2014
Detailed Description MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET a...
Datasheet PDF File MDF7N65B PDF File

MDF7N65B
MDF7N65B

Overview
MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.
0A, 1.
35Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features    VDS = 650V ID = 7.
0A RDS(ON) ≤ 1.
35Ω @ VGS = 10V @ VGS = 10V Applications    Power Supply PFC High Current, High Speed Switching D G TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) (4) (1) Symbol VDSS VGSS TC=25oC TC=100 C o Rating 650 ±30 7.
0* Unit V V A A A W W/ oC mJ V/ns mJ o ID IDM 4.
4* 28* 42 TC=25 C Derate above 25 oC o PD EAR dv/dt EAS TJ, Tstg 0.
33 13.
1 4.
5 212 -55~150 Single Pulse Avalanche Energy Junction and Storage Temperature Range * Id limited by maximum junction temperature C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.
5 3.
01 Unit o C/W Jun 2011 Version 2.
2 1 MagnaChip Semiconductor Ltd.
http://www.
Datasheet4U.
com MDF7N65B N-channel MOSFET 650V Ordering Information Part Number MDF7N65BTH Temp.
Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to ...


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