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MXP6006DF

MaxPower
Part Number MXP6006DF
Manufacturer MaxPower
Description 60V N-Channel MOSFET
Published Apr 1, 2014
Detailed Description MXP6006DT, MXP6006DF Datasheet 60V N-Channel MOSFET Applications: ● ● Power Supply DC-DC Converters VDS 60V RDS(ON)(M...
Datasheet PDF File MXP6006DF PDF File

MXP6006DF
MXP6006DF

Overview
MXP6006DT, MXP6006DF Datasheet 60V N-Channel MOSFET Applications: ● ● Power Supply DC-DC Converters VDS 60V RDS(ON)(MAX) 6mΩ ID 115A a Features: ● ● ● ● Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Capability Ordering Information Park Number MXP6006DT MXP6006DF Package TO-220 TO-263 Brand MXP MXP TO-263 Absolute Maximum Ratings Symbol VDSS IDa IDM PD VGS EAS IAS Tj and Tstg TC=25℃ unless otherwise specified Parameter Value 60 115 459 158 1.
05 +/-20 449 Figure 9 -55 to 175 Unit V A W W/℃ V mJ A ℃ Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current @VG=10V Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy (L=1mH) Pulsed Avalanche Energy Operating Junction and Storage Temperature Range Thermal Resistance Symbol RθJC Parameter Min - Typ Max Unit 0.
95 Test Conditions Junction-to-Case Water cooled heatsink, PD ℃/W adjusted for a peak junction Temperature of 175℃ Note: a: Calculated continuous current based upon maximum allowable junction temperature +175 ℃.
Package limitation current is 80A.
©MaxPower Semiconductor Inc.
MXP6006DT Ver 1.
0 Sep.
2011 Page1 Free Datasheet http://www.
Datasheet4U.
com OFF Characteristics Symbol V(BR)DSS IDSS IGSS Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit 60 1 100 100 100 V uA nA Test Conditions VGS=0V, ID=250uA VDS=48V, VGS=0V VDS=48V, VGS=0V, TJ=125 ℃ Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage VGS=+20V VGS= -20V ON Characteristics Symbol RDS(ON) VGS(th) Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit 2 4.
6 6.
0 4 mΩ V Test Conditions VGS=10V, ID=24A VGS=VDS, ID=250uA Static Drain-to-Source On-Resistance Gate Threshold Voltage.
Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Parameter Essentially independent of operating temperature...


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