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2406KL-04W-B10

NMB-MAT
Part Number 2406KL-04W-B10
Manufacturer NMB-MAT
Description DC Axial Fan
Published Apr 22, 2014
Detailed Description FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5...
Datasheet PDF File 2406KL-04W-B10 PDF File

2406KL-04W-B10
2406KL-04W-B10

Overview
FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.
5A, 1.
35Ω Features • RDS(on) = 1.
15mΩ ( Typ.
) @ VGS = 10V, ID = 3.
25A • Low gate charge ( Typ.
20nC) • Low Crss ( Typ.
10pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D G G DS TO-220 FDP Series o GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 135 1.
05 -55 to +150 300 6.
5 3.
9 26 420 6.
5 13.
5 20 34.
5 0.
28 FDP8N60ZU FDPF8N60ZUT 600 ±30 6.
5* 3.
9* 26* Units V V A A mJ A mJ V/ns W W/oC o o Single Pulsed Avalanche Energy Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient FDP8N60ZU 0.
95 0.
5 62.
5 FDPF8N60ZUT 3.
6 62.
5 o Units C/W ©2009 Fairchild Semiconductor Corporation FDP8N60ZU / FDPF8N60ZUT Rev.
A 1 www.
fairchildsemi.
com Free Datasheet http://www.
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