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2406KL-04W-B30

NMB-MAT
Part Number 2406KL-04W-B30
Manufacturer NMB-MAT
Description DC Axial Fan
Published Apr 22, 2014
Detailed Description FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET February 2012 UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A...
Datasheet PDF File 2406KL-04W-B30 PDF File

2406KL-04W-B30
2406KL-04W-B30

Overview
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET February 2012 UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features • RDS(on) = 0.
85Ω ( Typ.
) @ VGS = 10V, ID = 3.
25A • Low Gate Charge ( Typ.
14nC) • Low Crss ( Typ.
5pF) • Fast Switching • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Description This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D G G D S TO-220 FDP Series o GDS TO-220F FDPF Series (potted) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 130 1 -55 to +150 300 7 4.
2 28 93 7 13 20 40 0.
32 FDP8N50NZF FDPF8N50NZF 500 ±25 7* 4.
2* 28* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient FDP8N50NZF 0.
96 0.
5 62.
5 FDPF8N50NZF Units 3.
1 62.
5 o C/W ©2012 Fairchild Semiconductor Corporation FDP8N50NZF / FDPF8N50NZF Rev.
C0 1 www.
fairchildsemi.
com Free Datasheet h...


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