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2SB1184

Part Number	2SB1184
Manufacturer	GME
Description	Power Transistor
Published	Apr 22, 2014
Detailed Description	Production specification Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements t...
Datasheet	2SB1184 PDF File

Overview

Production specification Power Transistor FEATURES z Low VCE(sat).
VCE(sat)=-0.
5V(Typ)(IC/IB=-2A/-0.
2A) z Complements the 2SD1760.
2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type.
PNP silicon transistor.
TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Collector-Base Volage Value Units VCBO -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A ICP Collector Power Dissipation -4.
5 A PC Collector Power Dissipation 1 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W007 Rev.
A www.
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