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D3N50

Alpha & Omega Semiconductors
Part Number D3N50
Manufacturer Alpha & Omega Semiconductors
Description AOD3N50
Published May 5, 2014
Detailed Description AOD3N50 3A, 500V N-Channel MOSFET General Description The AOD3N50 has been fabricated using an advanced high voltage MOS...
Datasheet PDF File D3N50 PDF File

D3N50
D3N50

Overview
AOD3N50 3A, 500V N-Channel MOSFET General Description The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features VDS (V) = 600V @ 150°C ID = 2.
8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C C Maximium 500 ±30 2.
8 1.
8 9.
0 2.
0 60 120 5 57 0.
45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR H Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink Maximum Junction-to-Case D,F A A,G EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 45 1.
8 Maximum 55 0.
5 2.
2 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
Datasheet4U.
com AOD3N50 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=125°C ID=250µA, VGS=0V VDS=500V, VGS=0V VDS=400V, TJ=125°C VDS=0V, VGS=±30V VDS=5V, ID=250µA VGS=10V, ...


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