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RU6055L

Ruichips
Part Number RU6055L
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published May 13, 2014
Detailed Description RU6055L N-Channel Advanced Power MOSFET MOSFET Features • 60V/60A, RDS (ON) =10mΩ(Typ.)@VGS=10V • Super High Dense Cell...
Datasheet PDF File RU6055L PDF File

RU6055L
RU6055L

Overview
RU6055L N-Channel Advanced Power MOSFET MOSFET Features • 60V/60A, RDS (ON) =10mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications • DC-DC Converters and Off-line UPS • High Speed Power Switching • High Frequency Circuits N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 60 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 240 A A W W °C/W ② 60 45 97 48 PD RθJC ③ Maximum Power Dissipation Thermal Resistance-Junction to Case 1.
55 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 121 mJ Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
B– FEB.
, 2011 www.
ruichips.
com http://www.
Datasheet4U.
com RU6055L Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU6055L Min.
Typ.
Max.
Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=30A 60 1 10 2 3 4 ±100 10 12 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs 0.
8 24 21 1.
2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.
0MHz VDD=40V, RL=30Ω, IDS=30A, VGEN= 10V, RG=4.
7Ω 1.
0 1840 300 98 12 45 53 31 Input Capacitance Output Capacitance Revers...


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