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RU6051K

Ruichips
Part Number RU6051K
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 4, 2016
Detailed Description RU6051K N-Channel Advanced Power MOSFET Features • 60V/50A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V ...
Datasheet PDF File RU6051K PDF File

RU6051K
RU6051K


Overview
RU6051K N-Channel Advanced Power MOSFET Features • 60V/50A, RDS (ON) =10mΩ(Typ.
)@VGS=10V RDS (ON) =12mΩ(Typ.
)@VGS=4.
5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC-DC Converters and Off-line UPS Pin Description GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co.
, Ltd Rev.
A– OCT.
, 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 60 ±20 175 -55 to 175 50 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 200 A 50 A 36 71 W 36 2.
1 °C/W 100 °C/W 100 mJ www.
ruichips.
com RU6051K Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6051K Min.
Typ.
Max.
Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)④ Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=50A VGS=4.
5V, IDS=35A 60 1 30 123 ±100 10 14 12 18 Diode Characteristics VSD④ trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 1.
2 32 39 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Char...



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