DatasheetsPDF.com

10N65T

UNISONIC TECHNOLOGIES
Part Number 10N65T
Manufacturer UNISONIC TECHNOLOGIES
Description 10A 650V N-CHANNEL POWER MOSFET
Published May 25, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 10N65T 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N 65T is ...
Datasheet PDF File 10N65T PDF File

10N65T
10N65T

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 10N65T 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N 65T is a high voltag e a nd high curre nt p ower MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av alanche char acteristics.
This po wer MOSF ET is usua lly used at high speed switching applications in power supplies, PWM motor co ntrols, h igh efficient D C to D C converters and b ridge circuits.
 FEATURES * RDS(ON) <0.
95Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL  ORDERING INFORMATION Package TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube Ordering Number Lead Free Halogen Free 10N65TL-TF3-T 10N65TG-TF3-T 10N65TL-TF1-T 10N65TG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.
unisonic.
com.
tw Copyright © 2013 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-878.
C http://www.
Datasheet4U.
com 10N65T  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 30 V Avalanche Current (Note 2) IAR 10 A Continuous I A D 10 Drain Current Pulsed (Note 2) IDM 38 A Single Pulsed (Note 3) EAS 90 mJ Avalanche Energy Repetitive (Note 2) EAR 15.
6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns Power Dissipation PD 50 W Junction Temperature TJ + 150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature 3.
L = 1.
8mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4.
ISD ≤ 9.
5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA θJA θJC RATING 62.
5 2.
5 UNIT °C/W °C/W P...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)