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11N80

UNISONIC TECHNOLOGIES
Part Number 11N80
Manufacturer UNISONIC TECHNOLOGIES
Description N-CHANNEL MOSFET
Published May 25, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N...
Datasheet PDF File 11N80 PDF File

11N80
11N80

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.
The UTC 11N80 is suitable for high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1 1 Power MOSFET TO-3P TO-220F1  FEATURES * RDS(ON) ≤ 1.
0Ω @ VGS=10V, ID=5.
5A * High switching speed 1 TO-220F2  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N80L-TF1-T 11N80G-TF1-T TO-220F1 11N80L-TF2-T 11N80G-TF2-T TO-220F2 11N80L-T3P-T 11N80G-T3P-T TO-3P Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-893.
f 11N80 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage Drain Current Avalanche Current Continuous Pulsed VGSS ID IDM IAR ±30 11 44 10.
5 V A A A Avalanche Energy Peak Diode Recovery dv/dt Single Pulsed EAS dv/dt 551 mJ 1.
8 V/ns Power Dissipation (TC=25°C) TO-220F1/TO-220F2 TO-3P PD 50 297 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature.
3.
L=10mH, IAS=10.
5A, VDD=50V, RG=25Ω, Starting TC=25°C.
4.
ISD ≤ 11A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL CHARACTERISTICS PARAMETER Junction to Ambient TO-220F1/ TO-220F2 TO-3P TO-220F1 Junction to Case TO-220F...


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