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2SA1943BL

NELL SEMICONDUCTOR
Part Number 2SA1943BL
Manufacturer NELL SEMICONDUCTOR
Description Silicon PNP Transistor
Published May 25, 2014
Detailed Description SEMICONDUCTOR 2SA1943BL Series Silicon PNP triple diffusion planar transistor -15A/-230V/150W RoHS RoHS Nell High Pow...
Datasheet PDF File 2SA1943BL PDF File

2SA1943BL
2SA1943BL

Overview
SEMICONDUCTOR 2SA1943BL Series Silicon PNP triple diffusion planar transistor -15A/-230V/150W RoHS RoHS Nell High Power Products 20.
00±0.
20 18.
00 ø3.
30 ± 0.
20 5.
00 3.
00 2.
00 9.
00 4.
00 6.
00 20.
50 26.
00 TO-3PL 2.
50 (typ.
) 3.
00 FEATURES High breakdown voltage, V CEO = -230V (min) Complementary to 2SC5200BL TO-3PL package which can be installed to the heat sink with one screw 5.
45 ± 0.
05 1.
00 (typ.
) 2.
50 0.
60 5.
45 ± 0.
05 3.
20 APPLICATIONS Suitable for use in 100W high fidelity audio amplifier’s output stage 1 2 3 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER B C E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current t p ≤ 5 ms PARAMETER VALUE -230 -230 -5 -30 -15 -1.
5 T C = 25 °C 150 150 UNIT V Collector current Base current Collector power dissipation Junction temperature Storage temperature A W ºC -55 to 150 THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Maximum thermal resistance, junction to case VALUE 1.
10 UNIT ºC/W http://www.
Datasheet4U.
com www.
nellsemi.
com Page 1 of 3 SEMICONDUCTOR 2SA1943BL Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) VALUE SYMBOL PARAMETER Collector cutoff current Emitter cutoff current CONDITIONS MIN.
ICBO I EBO V (BR)CEO V CBO V EBO V CBO = -230V, l E = 0 V EBO = -5V, l C = 0 -230 -230 -5 Rank-R h FE 1 Forward current transfer ratio (DC current gain) h FE 2 V CE(sat) V BE fT Collector to emitter saturation voltage Base to emitter voltage Transition frequency (Gain-Bandwidth product) Collector output capacitance V CE = -5V, I C = -7A l C = -8A, I B = -0.
8A V CE = -5V, I C = - 7 A V CE = -5V, I C = - 1 A V CB = -10V, I E = 0, f = 1 MHz V CE = -5V, I C = -1A Rank-O 80 160 55 110 V TYP.
MAX.
-5.
0 µA -5.
0 UNIT Collector to emitter breakdown voltage l CEO = -50mA, I B = 0 Collector to base voltag...


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