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2SC5198B

NELL SEMICONDUCTOR
Part Number 2SC5198B
Manufacturer NELL SEMICONDUCTOR
Description Silicon NPN Transistor
Published May 25, 2014
Detailed Description SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power ...
Datasheet PDF File 2SC5198B PDF File

2SC5198B
2SC5198B

Overview
SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power Products 2.
0 19.
9±0.
3 4.
0 20.
0 min 4.
0 max TO-3P(B) FEATURES High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to the heat sink with one screw 2 3 +0.
2 1.
05 -0.
1 5.
45±0.
1 C E +0.
2 0.
65 -0.
1 5.
45±0.
1 B 1.
8 15.
6±0.
4 9.
6 5 .
0 ±0 .
2 4.
8±0.
2 2.
0±0.
1 Φ 3.
2 ± 0,1 1.
4 C APPLICATIONS Suitable for use in 70W high fidelity audio amplifier’s output stage 1 2 3 B E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current t p ≤ 5 ms PARAMETER VALUE 140 140 5 20 10 1 T C = 25 °C 100 150 UNIT V Collector current Base current Collector power dissipation Junction temperature Storage temperature A W ºC -55 to 150 THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.
55 UNIT ºC/W http://www.
Datasheet4U.
com www.
nellsemi.
com Page 1 of 3 SEMICONDUCTOR 2SC5198B Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) VALUE SYMBOL PARAMETER Collector cutoff current Emitter cutoff current CONDITIONS MIN.
ICBO I EBO V (BR)CEO V CBO V EBO V CBO = 140V, l E = 0 V EBO = 5V, l C = 0 140 140 5 Rank-R h FE 1 Forward current transfer ratio (DC current gain) h FE 2 V CE(sat) V BE fT Collector to emitter saturation voltage Base to emitter voltage Transition frequency (Gain-Bandwidth product) Collector output capacitance V CE = 5V, I C = 5A l C = 7A, I B = 0.
7A V CE = 5V, I C = 5 A V CE = 5V, I C = 1 A V CB = 10V, I E = 0, f = 1 MHz V CE = 5V, I C = 1A Rank-O 80 160 55 110 V TYP.
MAX.
5.
0 µA 5.
0 UNIT Collector to emitter breakdown voltage l CEO = 50mA, I B = 0 Collector to base voltage Emitter to base voltage l CBO = 5 µA l EBO = 5.
0 µA 35 83 0.
3 0.
9 ...


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