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K5A65D

Toshiba
Part Number K5A65D
Manufacturer Toshiba
Description TK5A65D
Published May 30, 2014
Detailed Description TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK5A65D Switching Regulator Applications...
Datasheet PDF File K5A65D PDF File

K5A65D
K5A65D


Overview
TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK5A65D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
2 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 2.
6 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Gate-source voltage Drain current DC (Note Pulse (Note 1) 1) ymbol VDSS VGSS ID IDP PD EAS 180 IAR 5 EAR 4.
0 Tch 150 Tstg −55 to 150 Rating 650 ±30 5 20 40 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10U Weight: 1.
7 g (typ.
) ⎯ SC-67 1B Note: Using c ontinuously under h eavy l oads ( e.
g.
the a pplication of hig h te mperature/current/voltage a n...



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