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SI2306

JinYu
Part Number SI2306
Manufacturer JinYu
Description 20V N-Channel Enhancement Mode MOSFET
Published Jun 17, 2014
Detailed Description SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70...
Datasheet PDF File SI2306 PDF File

SI2306
SI2306

Overview
SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.
8 A RDS(ON) = 60mΩ @ VGS = 4.
5V RDS(ON) = 70mΩ @ VGS = 2.
5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF.
Millimeter Millimeter REF.
Min.
Max.
Min.
Max .
A 2.
70 3.
10 G 1.
90 REF .
B 2.
40 2.
80 H 1.
00 1.
30 0.
20 C 1.
40 1.
60 K 0.
10 D 0.
35 0.
50 J 0.
40 1.
15 E 0 0.
10 L 0.
85 F 0.
45 0.
55 M 0° 10° Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter S Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Power Dissipation (Note 1) Operating and Storage Temperature Range ymbol VDSS VGSS ID 2.
8 PD TJ, TSTG Ratings 20 ±12 Unit V A 350 -55 to +150 mW °C Note: 1.
Mounted on FR-4 PCB, 1 inch x 0.
85 inch x 0.
062 inch, for each single die.
1 JinYu semiconductor www.
htsemi.
com http://www.
Datasheet4U.
com Date:2011/05 SI2306 20V N-Channel Enhancement Mode MOSFET Electrical Characteristics @ TA = 25°C unle...


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